Single crystal sapphire possesses a unique conbination of excellent optical, physical and chemical properties. The hardest of the oxide crytals, Sapphire retains its high strength at high temperatures, has good thermal properties and excellent transparency. Sapphire is anistropic hexagonal crystal. Its properties depend on Crystallographic direction (relative to the optical C axis).

Sapphire Substrates are oriented to R,C,A or M axis. The three major forms of Sapphire are:

• CZ Sapphire - highest quality crystalline structure, dielectric isolations and uniform dielectric.

• R Plane - This sapphire is used in microelectronic IC applications

• Basal Plane Substrates - Used in optical applications.

Diamond Wire used on a Multi-Wire Saw is the primary choice for production of sapphire wafers. Cutting the wafers Tangentially (concentrically applying force to the cut) allows for a lapping quality of cut as well as highly parallel cuts.

SAMPLE
SIZE

WIRE
SIZE

WIRE
SPEED

ANGLE/
DEGREE

ROCK

FEED RATE

WIRE
TENSION

SAW USED

2" Diameter

.008"

1800 FPM

5 degree

Fast Rock

.00005 in/sec

5#

RTD420 Multi-Wire

3" Diameter

.010

1800 FPM

5 degree

Fast Rock

.00005 in/sec

6#

RTD420 Multi-Wire

Ra

0.819um

Wa

0.885um

Rq

1.448um

Wq

1.005um

Rz (Din)

4.238um

Wz (DIN)

1.723um

Rmax

4.365um

Wmax

4.070um

Rp

7.200um

Wp

4.435um

Rv

2.169um

Wv

10.517um

Rt

3.369um

Wt

4.952um

Rsk

-0.237

Wsk

1.071

Diamond Wire Technology, LLC - 1605 South Murray Blvd. - Colorado Springs, CO 80916 - USA
Phone (719) 570-1150 - Fax (719) 570-1176 - Email: info@diamondwiretech.com